questions about [PATCH]mtd: nand: fix SCAN2NDPAGE check for BBM

From: Yanjiantao
Date: Tue Oct 13 2015 - 07:35:04 EST


Dear Brian,

i read the patch: " mtd: nand: fix SCAN2NDPAGE check for BBM "
And i am confused about the markbad flows.

xxxxx;
if (chip->bbt_options & NAND_BBT_SCANLASTPAGE)
ofs += mtd->erasesize - mtd->writesize;

xxxxx;

do {
if (chip->options & NAND_BUSWIDTH_16) {
chip->cmdfunc(mtd, NAND_CMD_READOOB,
chip->badblockpos & 0xFE, page);
bad = cpu_to_le16(chip->read_word(mtd));
if (chip->badblockpos & 0x1)
bad >>= 8;
else
bad &= 0xFF;
} else {
chip->cmdfunc(mtd, NAND_CMD_READOOB, chip->badblockpos,
page);
bad = chip->read_byte(mtd);
}

if (likely(chip->badblockbits == 8))
res = bad != 0xFF;
else
res = hweight8(bad) < chip->badblockbits;
ofs += mtd->writesize;
page = (int)(ofs >> chip->page_shift) & chip->pagemask;
i++;
} while (!res && i < 2 && (chip->bbt_options & NAND_BBT_SCAN2NDPAGE));
mark bad flows is the same.

If I understand the patch right, then I think that:
1. when NAND_BBT_SCANLASTPAGE is set, markbad and checkbad on the last page only.
2. when NAND_BBT_SCAN2NDPAGE is set, markbad and checkbad on the 1st and 2nd page.

I checked some datasheets of different manufacturers(such as SAMSUNG/HYNIX/MICRON/TOSHIBA), they claim that bad block marker is on 1st/2nd, or 1st/last, or 1st/2nd/last(for spansion).
the checkbad method may check fail in some cases:
for example,:
1. for spansion nand(bad block marker is on 1st or 2nd or last page), set NAND_BBT_SCAN2NDPAGE while badblock marker is on last page or set NAND_BBT_SCANLASTPAGE while badblock marker is on 1st/2nd page may cause badblock chech failed.
2. for HYNIX (H27UBG8T2CTR) nand (bad block marker is on 1st or last page), check may failed whether NAND_BBT_SCANLASTPAGE is set or not.


--
To unsubscribe from this list: send the line "unsubscribe linux-kernel" in
the body of a message to majordomo@xxxxxxxxxxxxxxx
More majordomo info at http://vger.kernel.org/majordomo-info.html
Please read the FAQ at http://www.tux.org/lkml/